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First principles calculations of the structural and electronic properties of AlAs, InAs and their alloy Al<sub>x</sub>In<sub>1–x</sub>As have been performed using the full-potential linear muffin-tin orbital (FP-LMTO) [1] method within density functional theory (DFT) [2,3]. We used the local density approximation (LDA) [4] within the generalized gradient correction (GGA) [5] to calculate the electronic structure at equilibrium volume. The effect of composition on lattice constants, bulk modulus and band gap were investigated. Deviations of the lattice constants from Vegard’s law and the bulk modulus were observed for this alloy. The microscopic origins of the gap bowing were explained by using the approach of Zunger and co-workers [6-9]

materials sciences and applications

&amp;lt;i&amp;gt;Ab Initio&amp;lt;/i&amp;gt; Calculations Study of Structural and Electronic Properties of Ternary Alloy Al&amp;lt;sub&amp;gt;x&amp;lt;/sub&amp;gt;In&amp;lt;sub&amp;gt;1–x&amp;lt;/sub&amp;gt;As