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To determine the nucleation region location of Si nano-crystal grains, pulsed laser ablation of Si target is performed in Ar gas of 10 Pa at room temperature with laser fluence of 4 J/cm2, the substrates are located horizontal under ablation spot with different vertical distance. Characteristics of deposited grains are described by scanning electron microscopy, Raman scattering and X-ray diffraction spectra, the results indicate that deposition position on substrates in a certain range is relative to target surface, which changes according to different vertical distance of substrates to ablation spot. Grain size increased at first and then decreased with addition of lateral distances to target in the range, but the integral distribution rule was independent of position of substrates. Combining with hydrodynamics model, nucleation division model, thermokinetic equation and flat parabolic motion, spatial nucleation region location of grains is obtained through numerical calculations, which is <st1:chmetcnv unitname="mm" sourcevalue="2.7" hasspace="True" negative="False" numbertype="1" tcsc="0" w:st="on">2.7 mm</st1:chmetcnv>-<st1:chmetcnv unitname="mm" sourcevalue="43.2" hasspace="True" negative="False" numbertype="1" tcsc="0" w:st="on">43.2 mm</st1:chmetcnv> to target surface along the plume axis.<o:p></o:p> </p

Determination of the Nucleation Region Location of Si Nano-Crystal Grains Prepared by Pulsed Laser Ablation through Changing Position of Substrates