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We have measured weak antilocalization effects, universal conductancefluctuations, and Aharonov-Bohm oscillations in the two-dimensional electrongas formed in InGaAs/AlInAs heterostructures. This system possesses strongspin-orbit coupling and a high Land\'{e} factor. Phase-coherence lengths of2$-$4 $\mu$m at 1.5$-$4.2 K are extracted from the magnetoconductancemeasurements. The analysis of the coherence-sensitive data reveals that thetemperature dependence of the decoherence rate complies with the dephasingmechanism originating from electron-electron interactions in all threeexperiments. Distinct beating patterns superimposed on the Aharonov-Bohmoscillations are observed over a wide range of magnetic fields, up to 0.7 Teslaat the relatively high temperature of 1.5 K. The possibility that these beatsare due to the interplay between the Aharonov-Bohm phase and the Berry one,different for electrons of opposite spins in the presence of strong spin-orbitand Zeeman interactions in ring geometries, is carefully investigated. Itappears that our data are not explained by this mechanism; rather, a fewgeometrically-different electronic paths within the ring's width can accountfor the oscillations' modulations.

Dephasing measurements in InGaAs/AlInAs heterostructures: manifestations of spin-orbit and Zeeman interactions