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High Ga content Cu(In,Ga)Se2 thin films incorporated sulfur were prepared by sequential evaporation from CuGaSe2 and CuInSe2 ternary compounds and subsequently Ga2Se3, In2Se3 and In2S3 binary compounds. The In2S3/(Ga2Se3+ In2Se3) ratio was varied from 0 to 0.13, and the properties of the thin films were investigated. XRD studies demonstrated that the prepared thin films had a chalcopyrite Cu(In,Ga)Se2 structure. The S/(Se+S) mole ratio in the thin films was within the range from 0 to 0.04. The band gaps of Cu(In,Ga)Se2 thin films increased from 1.30 eV to 1.59 eV with increasing the  In2S3 /(Ga2Se3+ In2Se3) ratio.

advances in materials physics and chemistry

Preparation of High Ga Content Cu(In,Ga)Se&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; Thin Films by Sequential Evaporation Process Added In&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;S&amp;lt;sub&amp;gt;3&amp;lt;/sub&amp;gt;