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The aim of the study is to develop ultra-compact structures enabling anefficient conversion of single high energy photon (UV) to two lower energyphotons (IR). The proposed structure combines rare-earths doped thin layerallowing the down-conversion process with a photonic crystal (PhC), in order tocontrol and enhance the down-conversion using optical resonances. On the top ofthe rare-earths doped layer, a silicon nitride (SiN) 2D planar PhC issynthesized. For that, SiN is first deposited by PECVD. After holographiclithography and reactive ion etching, a periodic square lattice of holes isgenerated on the SiN layer. The PhC topographical parameters as well as thelayers thickness are optimized using Finite-Difference-Time-Domain simulations.The design and realization of such PhC-assisted down-converter structures ispresented. Optical simulations demonstrate that the PhC leads to theestablishment of resonant modes located in the underneath doped layer, allowinga drastic enhancement of the absorption of the rare-earth ions withoutdisturbing the transmission in the visible and near-IR parts of the spectrum,hence demonstrating the relevance of such an approach.

Down Converter Device Combining Rare-Earth Doped Thin Layer and Photonic Crystal for c-Si Based Solar Cell