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SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (T dep ) range of 1150 - 1422 K. At T dep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (R dep ) was 220 μm h −1 at T dep = 1262 K.

Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition