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Si(Al)ON precursor was synthesized by formation of new Si-N bond using organoaluminum imine and liquid type poly(phenyl carbosilane). It was decomposed between 200 - 600℃, and the ceramic yield was 51% after pyrolysis. 150 ? 200 ㎚ in thickness of coating film was obtained by spin coating method. The precursor was easily oxidized during process because it was unstable in air. However the oxygen content was limited to 0.5 - 0.7 to silicon in heat treatment step. Even though the content of nitrogen was decreased by pyrolysis, Al-N and Si-N bonds were formed in ammonia atmosphere, and Si(Al)ON film was formed with 0.2 in content to silicon.

han-guk seramik hakoeji/han'gug se'la'mig haghoeji

Preparation of Si(Al)ON Precursor Using Organoaluminum Imine and Poly (Phenyl Carbosilane), and the Compositional Change of the Film with Different Heat Treatment Condition