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In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous GeSe₂ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based As₂Se₃ films. As for the present GeSe₂ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic GeSe₂ phase. The increased vulnerability of this amorphous GeSe₂ film toward surface crystallization under static loading, when compared with the As₂Se₃ counterpart, is explained in terms of the topological aspects of its amorphous structure.

Deformation of Amorphous GeSe2 Film under Uniaxial Pressure Applied at Elevated Temperatures