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In order to investigate the effect of tail state on the electrical and the optical properties in amorphous IGZO(a-IGZO), a-IGZO films were deposited at room temperature on fused silica substrats using pulsed laser deposition method. The laser pulse energy was used as the processing parameter. In-situ post annealing was carried out at 150℃ right after the film deposition. The O₂ partial pressure during the deposition and the post annealing was fixed to 10mTorr. The carrier mobility of the a-IGZO films had a range from 2 to 18 ㎠/Vs at carrier concentrations greater than 10 18 ㎝ -3 . As the laser energy density increased, the Hall mobility increased. And post annealing improved the Hall mobility, as well. The optical property was examined using the ultraviolet-visible spectroscopy. The a-IGZO films that have low Hall mobility exhibited stronger and broader absorption tails in 3.0 eV region. Post annealing reduced the intensity of the tail-like absorption. The absorption tail in a-IGZO films is an important factor which affects the electrical and the optical properties.

The Effect of Tail State on the Electrical and the Optical Properties in Amorphous IGZO