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In this paper a comparative study of the electronic transport phenomenon in the semiconductor II-VI alloy HgCdTe is presented. In this study we have adopted Monte Carlo simulation. The model of the method used in this work takes into account the valleys, L and X of the conduction band, in which considered isotropic but not parabolic. This model provides a detailed description of the electronic dynamic and the electrons behavior at high electrical fields and high temperatures in these materials in each considered valleys. Furthermore, he permits two main functions: the calculation of the scatterings rates taken into consideration and the determination of the instantaneous quantities such as speed, energy etc. The obtained results, compared on many experimental reference frames, are satisfactory.

The Study and Simulation of the Electron Transport Phenomena on Bulk Hg1-xCdx Te Based on an Ensemble Monte Carlo Method