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Fatigue-free and highly c-axis oriented Bi4-xSmxTi3O12 (BSmT; x=0.85) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metal-organic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (Pr) and the nonvolatile charge as compared to those of the Bi4-xLaxTi3O12 (BLT; x=0.75) film capacitor, recently known as a promising candidate for nonvolatile memories. The 2Pr value of the BSmT capacitor was 49μC/cm at an applied voltage of 10 V while the net nonvolatile charge was as high as 20μC/cm and remained essentially constant up to 4.5×10 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor showed excellent charge-retention characteristics with its sensing margin of 17μC/cm and a strong resistance against the imprinting

Fatigue-free Samarium-modified Bismuth Titanate Having Large Remanent Polarization and Charge-retaining Ability