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Copper is one of the important alloying elements in commercial aluminum alloys to improve their mechanical properties. In surface treatments of Al-Cu alloys, the copper atoms enrich at the alloy/film interface as a consequence of preferential oxidation of aluminum. In particular, it was shown that only aluminum is oxidized at the alloy/film interface and copper atoms accumulate in a thin alloy layer, 1-2 nm thick, immediately beneath the anodic film during initial stage of anodizing in a barrier film forming electrolyte. The accumulation of copper atoms was quantitatively examined by Rutherford backscattering spectroscopy. The interfacial copper enrichment influences the morphology of porous films formed on aluminum in acid anodizing. GDOES is now a widely accepted technique for elemental depth profiling of thin films, conducting or non-conducting, less than 10 nm thickness. Even molecular monolayers adsorbed on metal surfaces were successfully depth profiled by the GDOES. Such high depth resolution is originated from the Ar ions of low energies <50 eV, wide incident angles and high current densities of the order of 100 mA cm. In this study, we demonstrate the successful utilization of GDOES for quantitative analysis of copper atoms accumulated in a thin alloy layer beneath the anodic film formed on Al-0.9 at% Cu alloy.

GDOES Depth Profile Analysis of Interfacial Enrichment of Copper during Anodizing of Al-Cu Alloy