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A photoresist-patterned, rolled TiNi (50at% Ti-50at% Ni) sheet 150μm thick was etched electrochemically in 5% H2SO4/CH3OH solution and the effects of applied voltage and pattern width on etch rate and etching accuracy were studied. SEM observation and AES depth analysis revealed that the rolled TiNi specimen had an unetchable surface oxide layer about 3μm thick. The specimen was etched through microcracks in the oxide layer, then distributed throughout the alloy bulk beneath the oxide layer. At an applied voltage exceeding 6V, grooves of different widths were etched uniformly at 0.15μm/s and an etch factor of about 2, independent of groove width. Etched grooves wider than 500μm had a W-shaped profile due to the current flow concentration at the edge of the photoresist mask aperture. At an applied voltage below 5V, uniform etching did not occur at grooves wider than 500μm. We also took a brief look at the oxide removal before etching.

Electrochemical Photoetching of Rolled Shape Memory Alloy Sheets for Microactuators.