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Cubic (c-) BN thin films including an sp2-bonded phase were prepared by controlling the substrate potential and H2/N2 flow ratio in the plasma chemical transport (PCT) of boron from boron powder. In this chemical vapor deposition (CVD) process, it is not necessary to use dangerous materials such as boron hydrides or organic boron adducts which contaminate films. We found that 800°C was the most suitable substrate temperature for c-BN growth in our experiment. Both rates of the formation of sp2-BN and of its sputtering by energetic nitrogen ions were greater than those of c-BN. The N/B ratio of the film gradually decreased from a stoichiometric composition (N/B=1) when the substrate was negatively biased. The hydrogen content in the plasma must be as low as possible with a suitable bias voltage impression to the substrate, because energetic hydrogen ions have the possibility of chemically interrupting the formation of c-BN and etching BN deposits.

Preparation of Boron Nitride Thin Films by Using Plasma Chemical Transport of Boron.