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This paper reports the design, fabrication and characterization of a planar waveguide based on an hydrogenated amorphous silicon (α-Si:H) - silicon carbonitride (SiCxNy) multistack for the realization of passive and active optical components at the wavelength 1.3--1.5 μm. The waveguide was realized by low temperature plasma enhanced chemical vapour deposition (PECVD) compatible with standard microelectronic technologies. Electro-optical modulation at λ= 1.5 μm is demonstrated in this waveguide. The device operates by varying the free carrier concentration to change the Si absorption coefficient in the guiding region. It has been modelled using the two-dimensional (2-D) device simulation package SILVACO and the optical simulator Beam PROP to determine its electrical and optical performances, respectively.

Design, fabrication and characterization of an a - Si:H / a - SiCN waveguide multistack for electro-optical modulation