English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

ZnTe thin lms were galvanostatically electrodeposited onto (100) InP substrates from an electrolytic solution containing TeCl 4 dissolved in DMSO. Cyclic voltammetry in the dark was used to identify the process involved in the complex electrochemical reduction of the Te(IV) precursor. Quantitative analysis of energy dispersive x-ray analysis results indicated that the composition ratio (Zn:Te) was not possible to determine due the presence of a tellurium excess in the deposits. X-ray diffraction results revealed that the thin lms obtained showed a preferred (200) orientation with cubic structure indicating the existence of an epitaxial grow along the (100) crysytalline planes of the InP substrate. The n-type character of the lms was deduced from Mott-Schottky plots that also gave a donor density of 1.54 x 10 +18 cm –3 . From the optical absortion measurements a bandgap of 2.21 eV was obtained.Key words: ZnTe, electrodeposition, semiconductors. INTRODUCTION Zinc telluride is a wide-gap II-VI compound semiconductor which has shown great potential for optoelectronic device applications such as light-emmiting devices

STRUCTURAL AND SEMICONDUCTING PROPERTIES OF ZnTe THIN FILMS GALVANOSTATICALLY GROWN ONTO MONOCRYSTALLINE InP SUBSTRATE FROM TeCL4 /DMSO SOLUTION