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In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes