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It is strongly desired to operate SiC power devices at higher junction temperatures (Tj), but that often entails problems because they contain a variety of materials with thermal activity or weakness. An example of such troubles is the steep increase in resistance of the Al electrode in the source (or emitter) contact holes, caused by electromigration (EM). In this work, EM reliability of the contact hole in SiC power devices was evaluated for an improved Al electrode sandwiched between thin TaN layers. An estimated mean time to failure (MTTF) of approximately 3400 years was achieved under conditions of Tj = 300°C and J = 104 A/cm2.

Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures