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In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETswas studied at the nanoscale, analyzing devices that failed after extremelylong (three months) of high temperature reverse bias (HTRB) stress. Aone-to-one correspondence between the location of the breakdown event and athreading dislocation propagating through the epitaxial layer was found.Scanning probe microscopy (SPM) revealed the conductive nature of the threadingdislocation and a local modification of the minority carriers concentration.Basing on these results, the role of the threading dislocation on the failureof 4H-SiC MOSFETs could be clarified.

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress