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The growth of vertically aligned ZnO Nanorods arrays using Zinc Nitrate hexahydrate and Hexamethylene Tetramine (HMTA), by Chemical Bath Deposition on Silicon Wafer was investigated. The growth is conducted under influence of Ethane-1,2-diamine, the amine based enhancer was evaluated based on three different ratios (1:0.5, 1:1, 1:1.5) of enhancer to the precursor (Zinc Nitrate and HMTA). The effect different ratios of enhancers on morphology aspect ratio and crystallinity of the as grown Nanorods were studied under Scanning electron microscope (SEM) and X-ray powder diffraction (XRD). Electrical Properties such as current–voltage characteristics were investigated, its correlation to the morphology and aspect ratio of the Nanorods in the presence of 100μL-500μL of Aromatic Compound Cyclohexane and at different applied voltages.

Effect of Ethane-1,2-Diamine on Growth of ZnO Nanorods and Cyclohexane Sensing by Current-Voltage Characteristics Investigations