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Interaction of a semiconductor plate with TE11 wave in a circular waveguide has been analysed for the purpose of optimizing a frequency response of a resistive sensor (RS). The performance of the RS is based on the electron heating effect and it is devoted to high power microwave pulse measurement. The semiconductor plate with contacts on its sidewalls serves as sensing element (SE) of the RS. A three-dimensional finite-difference time-domain method (FDTD) was applied to simulate wave propagation within a circular waveguide segment with the SE which is placed on a wall of the circular waveguide. The electric field distribution, voltage standing wave ratio (VSWR), and the average electric field dependences on frequency have been determined for several sets of dimensions and specific resistances of the SE. The parameters of the optimal SE were found.Keywords: electromagnetic wave, circular waveguide, mode TE11, semiconductor obstacle, resistive sensor

Modelling of resistive sensor for high power microwave pulse measurement of TE11 mode in circular waveguide