English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The photoluminescence (PL) spectra of GaAs/AlGaAs structures designed for microwave and terahertz detectors were investigated. Detailed experimental results of PL were obtained both before and after etching of the heavily doped layers. Possible mechanisms of carrier recombination are discussed and certain emphasis is put on the up to 20 times enhancement of the PL intensity observed in these detector structures.

Photoluminescence characterisation of GaAs/AlGaAs structures designed for microwave and terahertz detectors