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The forward voltage, series resistance, and junction conductivity of commercial high-power InGaN light-emitting diodes (LEDs) were investigated as a function of aging time. A gradual decrease of series resistance with a rate of about i1%=1000 h was revealed in InGaN LEDs within rst »9,600 hours of aging under ordinary conditions (nominal forward current 350 mA, junction temperature 350 K), whereas the characteristic energy of tunnel injection exhibited a decrease with a rate of about i0.1%=1000 h. The observed aging effects were attributed to continuous post-fabrication self-annealing of the p-type cladding layer and to the variation of the localized-state density in the active layer of the LED chips.

Effect of long-term aging on series resistance and junction conductivity of high-power InGaN light-emitting diodes