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In the present study yttrium stabilized zirconia (YSZ) thin films were deposited on the Alloy-600 and optical quartz substrates using e-beam deposition technique with controlled deposition parameters: substrate temperature (Ts) and electron gun power (P ) influencing the thin film deposition mechanism. The dependence of these parameters on thin film ionic conductivity, structure, and surface morphology was investigated by X-ray diffraction and scanning electron microscopy (SEM). It was found that electron gun power has the influence on the crystallite size, texture, and roughness of YSZ films. Dominating dispersion in the deposited YSZ thin films (substrate temperature T = 250 ◦C, e-beam gun power P = 0.9 kW) relates to ionic transport in the crystallites in the measured frequency and temperature ranges. The measured values of conductivity and its activation energies are those typical of the polycrystalic ZrO2–8 mol% Y2O3 compound. The conductivity values of crystallites of YSZ thin films and ceramics are similar. Differences are found only in thin films deposited at T = 250 ◦C and P = 0.66 kW.

Ionic conductivity of e-beam deposited yttrium stabilized zirconia thin films