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Variation of carrier lifetime in magnetic Czochralski and oat zone silicon irradiated with Co-60 ∞-rays was investigated for doses in the range from 50 to 400 MRad. The inverse carrier lifetime was found to increase approximately linearly with dose and the carrier capture cross-section has been determined. The recombination and trapping constituents within recombination transients have been distinguished by combining analyses of the excess carrier decays measured using microwave absorption by free carriers for different excitation conditions and temperatures. The activation energies of traps and recombination centres have been determined from the carrier lifetime dependence on temperature.

Dose-dependent recombination in silicon irradiated by gamma rays as determined by microwave absorption transients