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Spatial distribution of impurities in the base of high voltage planar diodes with additionally incorporated Au atoms (pñn junction area from 1 to 270 mm2) was inferred according the capacitanceñvoltage (CñU ) characteristics measured by industrial capacitance meters. The capacitance divider and linearly varying voltage method (with the amplitude up to 1000 V) were additionally used to extend the operation of capacitance meters to a wider frequency range and to eliminate the inuence of reverse current. We had found a nonuniform distribution of dopants (Au atoms) in the diode base, which are introduced to improve the frequency characteristics of the diodes.

Distribution of impurities in the bases of high voltage Si diodes