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Excess carrier lifetime variations in proton and ∞-ray irradiated MCz Si have been examined. The linear decrease of recombination lifetime with dose in ∞-ray irradiated material shows a dose-independent defect introduction rate, while protons of high uence induce changes of the type of the dominant radiation defects. The simultaneous recombination and trapping components in the carrier decay transients were revealed by microwave absorption technique. Two peaks were separated in recombination and trapping lifetime variations with temperature. Trap activation factors were extracted. The dominant defects acting as recombination and trapping centres are discussed.

Dynamics of carrier decay in proton and γ-ray irradiated high-resistivity Si