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We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$surface, which is stabilized for highly boron-doped samples, by usingfirst-principles calculations. When the silicon adatom on top of a boron atomis removed to form a defect structure, three silicon dangling bonds are exposedgenerating half-filled doubly degenerate energy levels in the band gap whichstabilizes a local magnetic moment of 2 $\mu_{\rm B}$. When there are many suchdefect structures adjacent one another, they are found to alignantiferromagnetically. However, we demonstrate that the ferromagnetism can bestabilized by adjusting the number of electrons in defects, suggesting apossibility towards spintronic applications of this unique silicon surfacestructure.

Magnetism on the boron-doped Si(111)-$\sqrt 3 \times \sqrt 3$ surface