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Sentence (p. 874) in Chapter II starting with “They are ⋯ on the device fabrication process [10-15].” should be corrected as “They are ⋯ on the device fabrication process [10-15]. We also note that charge states in traps are gate bias-dependent [16].”.Two paragraphs (p. 874) in Chapter II “Figure 2 shows the energy-band diagram ⋯ the gate voltage applied across the MOS capacitor.” and “Figure 3(c) shows the condition at inversion in which there is now a net negative charge in the acceptor states [15,16].” and Figs. 2 and 3 should be removed.

Erratum to: Distribution of interface states in MOS systems extracted by the subthreshold current in MOSFETs under optical illumination