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Photodiodes are widely used to convert lights into electrical signals. Theconventional silicon (Si) based photodiodes boast high photoelectric conversionefficiency and detectivity. However, in general, inorganic-based photodiodeshave low visible wavelength sensitivity due to their infrared wavelengthabsorption. Recently, electrical conducting polymer-based photodiodes havereceived significant attention due to their flexibility, low cost of productionand high sensitivity of visible wavelength ranges. In the present work, wefabricated an organic photodiode (OPD) consisting of ITO/ NiOx/ P3HT:PC60BM/YbF3/ Al. In the OPD, a yitterbium fluoride (YbF3) buffer layer was used as theelectron transport layer. The OPD was analyzed for its optical-electricalmeasurements, including J-V characteristics, detectivity and dynamiccharacteristics. We have investigated the physical effects of the YbF3 bufferlayer on the performance of OPD such as its carrier extraction, leakage currentand ohmic characteristics.

Dark Current Reduction of P3HT-Based Organic Photodiode Using a Ytterbium Fluoride Buffer Layer in Electron Transport