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We have investigated the H2 pressure-dependent (from vacuum to 20 bar)current-voltage characteristics of ZnO thin films prepared by spin coatingmethod. The gas pressure effect on conductance (G) was subtracted using He gas.The G increased as applying 2 bar of H2 pressure, and then it monotonouslydecreased with the further increment of H2 pressure. Using X-ray diffractionpatterns and X-ray photoelectron spectroscopy before and after H2 exposure, wefound that the H2 spillover effect plays an important role in the variation ofG of ZnO film.

Electrical Transport Property of ZnO Thin Films in High H2 Pressure up to 20 bar