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In this research, a methodology is proposed to extract temperature coefficient of open circuit voltage and intensity dependence of short circuit current of PV cells. A holistic combination of experiments and diode models of photovoltaic cells was used. The effects of light intensity and cell temperature on the performance of different solar cell technologies were investigated. Three main photovoltaic cell technologies were investigated, namely monocrystalline, polycrystalline and thin-film. The monocrystalline and polycrystalline technologies were modeled using the one-diode model whereas the thin-film technology was modeled using the two-diode model. The mean absolute bias error was close to zero for the models, which confirmed their reliability. It was observed that light intensity highly affected the current parameters while having little effect on the voltage parameters. It was also noted that cell temperature affected the voltage parameters while having minimal effect on the current parameters. The study revealed that wafer based technology exhibited higher response to irradiance and lower temperature coefficient than thin film technology. Irrespective of cell technology, temperature coefficient is linearly dependent on intensity of light.

Simple and effective method for evaluating performance of Si based photovoltaic cell technologies