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We have analyzed phosphorus diffusion profiles in an In 0.01 Ga 0.99 As/In 0.56 Ga 0.44 P/Ge germanium structure during phosphorus co-diffusion with gallium for synthesis of the germanium subcell in multi-junction solar cells.. Phosphorus diffused from the In 0.56 Ga 0.44 P layer simultaneously with gallium diffusion into the heavily gallium doped germanium substrate thus determining the specific diffusion conditions. Most importantly, gallium and phosphorus co-diffusion produces two  p – n  junctions instead of one. The phosphorus diffusion profiles do not obey Fick’s laws. The phosphorus diffusion coefficient  D  P  depth distribution in the specimen has been studied using two methods, i.e., the Sauer–Freise modification of the Boltzmann–Matano method and the coordinate dependent diffusion method. We show that allowance for the drift component in the coordinate dependent diffusion method provides a better  D  P  agreement with literary data. Both methods suggest the  D  P  tendency to grow at the heterostructure boundary and to decline closer to the main  p – n  junction. The  D  P  growth near the surface  p – n  junction the field of which is directed toward the heterostructure boundary and its decline near the main  p – n  junction with an oppositely directed field, as well as the observed  D  P  growth with the electron concentration, suggest that the negatively charged  V  Ge P complexes diffuse in the heterostructure by analogy with one-component diffusion.

Coordinate dependent diffusion analysis of phosphorus diffusion profiles in gallium doped germanium