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In this paper, we report the charge trapping phenomena in zinc oxide ( n - ZnO ) and Bi 0.7 Dy 0.3 FeO 3  (BDFO)/ ZnO  thin films deposited on  p -type &lt;100&gt; conducting Si substrate. The significant change in contrast above the protrusions of  ZnO  verifies the possibility of heavy accumulation of injected holes in there. The  ZnO  and BDFO/ ZnO  films were characterized by the electrostatic force microscopy ( EFM ) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The  EFM  has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ ZnO , the contrast of  EFM  images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of  ZnO  suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

modern electronic materials

Electrostatic force microscopy analysis of Bi 0.7 Dy 0.3 FeO 3  thin films prepared by pulsed laser deposition integrated with  ZnO  films for microelectromechanical systems and memory applications