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The relative intensity noise (RIN) characteristics in 405 nm blue laser diodes grown on wurtzite AlGaInN multiple quantum well structures were investigated using the rate equations with the quantum Langevin noise model. The device parameters were extracted from the optical gain properties of the MQW active region using the self-consistent numerical method developed for calculating the multiband Hamiltonian in the strained wurtzite crystal. These methods have been applied to laser diodes for various conditions including the external feedback and the high frequency current injection.

journal of the optical society of korea/journal of the optical society of korea

Self-Consistent Analysis of the Relative Intensity Noise Characteristics in the Strained AlGaInN Laser Diodes with the High Frequency Current Modulation Effects