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In measurement of ƒÀ-rays from 14C with a silicon semiconductor detector, pulse height spectra are observed to change by insertion of absorbers between the source and the detector. An obvious broad peak appears in the spectra by the insertion. An increase in the absorber thickness reduces the peak height, and shifts the peak position to the higher energy side in the spectra. On the other hand, the increase in the distance between the source and the absorber also reduces the peak height, but does not move the position of the peak. The absorption curve derived from these results shows its particular shape corresponding to the respective position of the absorber. Therefore, the distortion of the pulse height spectrum for low-energy ƒÀrays depends not only on the thickness of the absorber but also on its position between the source and the detector.

Distortion of Pulse Height Spectra Due to Absorbers in the Measurement of Low-energy .BETA.-rays with a Silicon Detector.