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The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) with various active layer thicknesses ( T  IGZO ) were investigated. The photoleakage current was found to gradually increase in a-IGZO TFTs irrespective of the T  IGZO when the photon energy of visible light irradiation exceeded ≈2.7 eV. Furthermore, the influence of the T  IGZO on NBIS-induced instability in a-IGZO TFTs was explored by the combination of current-voltage measurements in double-sweeping V  GS mode and capacitance-voltage measurements. The NBIS-induced hysteresis was quantitatively analyzed using a positive gate pulse mode. When the T  IGZO was close to the Debye length, the trapped electrons at the etch-stopper/IGZO interface, the trapped holes at the IGZO/gate insulator interface, and the generation of donor-like states in an a-IGZO layer were especially prominent during NBIS.

beilstein journal of nanotechnology

Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses