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Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using thin films. The of the as-grown film ranged from 1 to 6.2 V, whereas the of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an film leads to an increase in content at the film surface with a subsequent change in the ratio at the surface. This was attributed to the change in ratios at the surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of thin films. In addition, crystalline can help stabilize the and distribution in memory switching in a Ti//Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and .

Effect of Oxygen Annealing on the Set Voltage Distribution Ti/MnO2/Pt Resistive Switching Devices