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The aim of this paper is to investigate the frequency-dependent electrical characteristics of the Al/Er2O3/SiO2 /n-Si/ Al MOS capacitor deposited by the e-beam PVD technique. The Er2O3/SiO2 films were annealed in the nitrogen ambient for 30 min at 550 oC. The crystal structure and surface morphology of thin films have been investigated by XRD and AFM. The capacitance-voltage(C-V) and conductance-voltage (G/w-V) measurements have been performed in the frequency range of 50kHz-1MHz at room temperature. Furthermore, the frequency effects on the series resistance and interface state density through C-V and G/w-V curves were studied and analyzed. It has been observed that the series resistance gives a peak for each frequency, decreasing and disappearing with increasing frequencies. Also, it has been shown that the density of interface states increases with increasing frequency. The measured and calculated results reveal that the frequency has a significant impact on both Rs and Dit of the fabricated MOS characteristics. These effects are supposed to occur because of the interfacial layer (SiO2) that is contained in between n-Si and Er2O3.

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er2O3/SiO2/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM

FREQUENCY-DEPENDENT ELECTRICAL CHARACTERISTICS OF Al/Er₂O₃/SiO₂/n-Si/ Al MOS CAPACITOR DEPOSITED BY E-BEAM