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Rare earth oxides (REOs) play an important role in the semiconductor technology. Europium oxide (Eu2O3) is one of REOs and it has been used in many applications such as optoelectronics, telecommunications, microelectronics and optical devices. However, in this study, Eu2O3 MOS capacitors have been fabricated by using the Electron Beam Evaporation (E-Beam) technique and the effects of different annealing temperatures on them have been investigated. Before and after annealing, the crystallographic and morphological properties of the Eu2O3 films have been analyzed by X-ray Diffraction and Atomic Force Microscopy. The electrical properties of the devices have been investigated using measuring C-V, G/ω-V characteristics. This preliminary study shows that Europium oxide can be suitable for application as a thin film.

rap conference proceedings

EFFECTS OF ANNEALING TEMPERATURE ON THE CRYSTALLOGRAPHIC, MORPHOLOGICAL AND ELECTRICAL CHARACTERISTICS OF E-BEAM DEPOSITED Al/Eu<sub>2</sub>O<sub>3</sub>/n-Si (MOS) CAPACITORS

EFFECTS OF ANNEALING TEMPERATURE ON THE CRYSTALLOGRAPHIC, MORPHOLOGICAL AND ELECTRICAL CHARACTERISTICS OF E-BEAM DEPOSITED Al/Eu2O3/n-Si (MOS) CAPACITORS

EFFECTS OF ANNEALING TEMPERATURE ON THE CRYSTALLOGRAPHIC, MORPHOLOGICAL AND ELECTRICAL CHARACTERISTICS OF E-BEAM DEPOSITED Al/Eu₂O₃/n-Si (MOS) CAPACITORS