순수한 NbTiO₂ 박막과 산소 분위기속의 재 증착된 NbTiO₂ 박막의 성장 변화 패턴에 관한 연구

In this study, NbTiO2 thin films were deposited on silicon substrates with a thickness of more than 200nm, and samples made under the same conditions were sintered in an oxygen atmosphere, followed by changes in the growth patterns and particle shape of the thin films sintered in pure and oxygen atmospheres. It was analyzed in relation to the photoelectric characteristics. Received(June 6, 2019), Review Result(June 29, 2019) Accepted(August 6, 2019), Published(August 31, 2019) Assistance Professor, 61452, Dept. Physics, Chosun Univ., 309 Pilmun-daero, Dong-gu, Gwangju, Korea E-mail: jeji@chosun.ac.kr * This work was supported by research fund from Chosun University, 2018 Growth Patterns of Pure NbTiO2 Thin Films and Re-deposited NbTiO2 Thin Films in Oxygen Atmosphere Copyright c 2019 HSST 836 Both pure Nb doped TiO2 thin films and Nb doped TiO2 sintered in O2 atmosphere had tetragonal structure. The crystal strength of the Nb doped titanium oxide thin film and the pure Nb doped titanium oxide thin film sintered in the oxygen atmosphere were changed. In the X-ray diffraction analysis, the anatase position of the titanium oxide thin film was 25 degrees, but the titanium oxide thin film sintered in oxygen atmosphere was shifted to 68 degrees, indicating that the growth direction change of the titanium oxide thin film grown in the oxygen atmosphere was changed. The X-ray diffraction pattern of the niobium-titanium dioxide thin film sintered at 600°C oxygen atmosphere showed a niobium peak, indicating that titanium oxide and niobium reacted at a high temperature above 450°C. In the electron micrograph of the thin film, the shape of the particles was mostly uniform, but some of the particles were agglomerated or angular and rounded. The hollow structure also showed the vacancy between the particles. The particle size of the pure niobium-doped titanium oxide thin film and the niobium-doped titanium oxide thin film sintered in an oxygen atmosphere were also observed to be changed by the formation conditions of the thin film