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Spin-orbit torque (SOT) magnetoresistance (MR) devices have attractedattention for use in next-generation MR devices. The SOT devices are known toexhibit different write properties based on the relative angle between themagnetization direction of the free layer and the write-current direction.However, few studies that compare the write properties of each type have beenreported. In this study, we measured the external perpendicular-magnetic fielddependence of the threshold write current density and the write currentswitching probability using two types of in-plane magnetization SOT-MR devices.

Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices