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Twisted bilayer graphene (TBG), in which two monolayer graphene are stackedwith an in-plane rotation angle, has recently become a hot topic due to uniqueelectronic structures. TBG is normally produced in air by the tear-and-stackmethod of mechanical exfoliation and transferring graphene flakes, by which asizable, millimeter-order area, and importantly clean interface between layersare hard to obtain. In this study, we resolved these problems by directlytransferring the easy-to-exfoliate CVD-grown graphene on SiC substrate tographene in a high vacuum without using any transfer assisting medium andobserved electronic band modulations due to the strong interlayer coupling.

Twisted bilayer graphene fabricated by direct bonding in a high vacuum