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We study the luminescence dynamics of telecom wavelength InAs quantum dotsgrown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs asa barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band.The luminescence decay is well described in terms of the theoretical interbandtransition strength without the impact of nonradiative recombination. Theintensity autocorrelation function shows clear anti-bunching photon statistics.The results suggest that our quantum dots are useful for constructing apractical source of single photons and quantum entangled photon pairs.

Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m