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Semiconductor optical amplifier (SOA) is wildly used as gain media in photonic integrated circuit, as it is integrable with various devices, including wavelength filter, on a same wafer. Quantum dot (QD) has been known to realize high temperature operation without using thermo-cooler, the saturated output power was not high due to the limited density of state in QD. To realize high saturated output power under high temperature, we have exploited active multi-mode interferometer (active-MMI) configuration on QD SOA. We fabricated active-MMI SOA using 1.31 μm InAs/GaAs quantum-dot active layer with the design of approximately 5 times larger footprint compared to single-stripe, whereas it holds regular single transverse mode output. As a result, significant improvement of 15 dB saturated output power at 75℃ was substantiated successfully.

Active multi-mode interferometer semiconductor optical amplifier on quantum dots toward high saturated output power under high temperature