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Active multi-mode interferometer semiconductor optical amplifier on quantum dots toward high saturated output power under high temperature
Author(s) -
Zhiyuan Fan,
Yasuhiro Hinokuma,
Haisong Jiang,
Kiichi Hamamoto
Publication year - 2022
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/ac6a3e
Subject(s) - optoelectronics , optical amplifier , materials science , active layer , interferometry , photonics , quantum dot , amplifier , semiconductor , wafer , power (physics) , wavelength , optics , physics , layer (electronics) , nanotechnology , laser , cmos , thin film transistor , quantum mechanics
Semiconductor optical amplifier (SOA) is wildly used as gain media in photonic integrated circuit, as it is integrable with various devices, including wavelength filter, on a same wafer. Quantum dot (QD) has been known to realize high temperature operation without using thermo-cooler, the saturated output power was not high due to the limited density of state in QD. To realize high saturated output power under high temperature, we have exploited active multi-mode interferometer (active-MMI) configuration on QD SOA. We fabricated active-MMI SOA using 1.31 μm InAs/GaAs quantum-dot active layer with the design of approximately 5 times larger footprint compared to single-stripe, whereas it holds regular single transverse mode output. As a result, significant improvement of 15 dB saturated output power at 75℃ was substantiated successfully.

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