Open AccessHigh-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode
Author(s) -
Kouichi Akahane,
Atsushi Matsumoto,
Toshimasa Umezawa,
Naokatsu Yamamoto
Publication year - 2020
Publication title -
japanese journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.487
H-Index - 129
eISSN - 1347-4065
pISSN - 0021-4922
DOI - 10.35848/1347-4065/abd2a1
Subject(s) - materials science , laser , optoelectronics , lasing threshold , optics , laser diode , diode , pulse (music) , quantum dot laser , quantum dot , injection seeder , mode locking , gain switching , longitudinal mode , semiconductor laser theory , physics , detector
A high-frequency pulse and a short pulse were generated using a quantum dot (QD) mode-locked laser diode (MLLD). We adopted a highly stacked QD structure using a strain-compensation technique within the active region of the QD-MLLD to fabricate a short-cavity MDDL. A two-section MLLD structure was fabricated with a cavity length of 500 μ m. This laser exhibited lasing with a threshold current of approximately 34 mA with zero bias within the saturable absorber region. The spectrum of this laser has a well-defined, wide-range longitudinal mode. A short pulse of 464 fs in width and a high repetition rate of 81 GHz was observed through an interference measurement using a Michelson interferometer.
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