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We consider the fluctuation-induced (Casimir) pressure in peptide filmsdeposited on GaAs, Ge, and ZnS substrates which are either in dielectric ormetallic state. Calculations of the Casimir pressure are performed in theframework of fundamental Lifshitz theory employing the frequency-dependentdielectric permittivities of all involved materials. The electric conductivityof semiconductor substrates is taken into account within the experimentally andthermodynamically consistent approach. According to our results, the Casimirpressure in peptide films deposited on dielectric-type semiconductor substratesvanishes for some definite film thickness, is repulsive for thinner andattractive for thicker films. The dependence of this effect on the fraction ofwater in the film and on the static dielectric permittivity of semiconductorsubstrate is determined. For the metallic-type semiconductor substrates, theCasimir pressure in peptide coatings is shown to be always repulsive. Possibleapplications of these results to the problem of stability of thin coatings inmicrodevices are discussed.

Attractive and repulsive fluctuation-induced pressure in peptide films deposited on semiconductor substrates