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When using a MEMS sensor to measure the vacuum of a medium, the transition flow between the viscous flow and molar flow is usually used to describe the gas convection due to the physical principle, which is difficult to study through analysis and simulation. In this study, the description of gas flow under different pressures in a CMOS-MEMS vacuum sensors has been incorporated into a new behavioral ANSYS model. The proposed model was built and the characteristic parameters in the model were obtained based on a CMOS-MEMS thermopile patterned with circular symmetry and an embedded heater as a heat source. It contains a characteristic length to describe the effective distance of heat dissipation to the silicon substrate, and the corresponding transition pressure to describe the symmetrical phenomenon of gas heat conduction. The macro-model is based on the description of the physical characteristics of heat transfer and the characteristic parameters of the CMOS-MEMS vacuum sensor. The characteristic length of 49 μm and the corresponding transition pressure of 2396 mTorr for the thermoelectric-type vacuum sensor were extracted and verified successfully. The results show that the average error for the prediction of vacuum sensing by the macro-model we proposed is about 1.11%. This approach provides more applications for vacuum analysis. It can reduce the complexity of simulation and analysis and provide better simulation effects, including gas conduction mechanisms.

A New Macro-Model of Gas Flow and Parameter Extraction for a CMOS-MEMS Vacuum Sensor