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The importance of Ga2O3-based material for harsh environmental applications has attracted the interest of researchers in exploring various fabrication and growth techniques of Ga2O3-based nanomaterials using effective and low-cost processes. Herein, a demonstration to improve the wettability of liquid gallium on a rough silicon surface is presented. To control the roughness process, the silicon surface was patterned and groove-shape structures on the silicon were created using a photoelectrochemical (PEC) etching technique. Gallium oxide nanostructures were grown by thermal oxidation from liquid Ga in the presence and the absence of a silver thin film used as a catalyst. Scanning Electron Microscopy (SEM) was used to observe the morphology of the nanostructures grown on the roughed surface of the silicon substrate. The conformal deposition of Ga2O3 nanostructures inside the grooves of the PEC etched silicon surface was observed. The presence of Ag catalyst was found to completely change the morphology of Ga2O3. This method is recommended for the sustainable and low-cost synthesis of nanostructured gallium oxide for applications, including gas sensing.

Novel Approach to Synthesize Nanostructured Gallium Oxide for Devices Operating in Harsh Environmental Conditions