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In this study, we present a highly integrated design of organic optoelectronic devices for Point-of-Need (PON) nitrite (NO2−) measurement. The spectrophotometric investigation of nitrite concentration was performed utilizing the popular Griess reagent and a reflection-based photometric unit with an organic light emitting diode (OLED) and an organic photodetector (OPD). In this approach a nitrite concentration dependent amount of azo dye is formed, which absorbs light around ~540 nm. The organic devices are designed for sensitive detection of absorption changes caused by the presence of this azo dye without the need of a spectrometer. Using a green emitting TCTA:Ir(mppy)3 OLED (peaking at ~512 nm) and a DMQA:DCV3T OPD with a maximum sensitivity around 530 nm, we successfully demonstrated the operation of the OLED–OPD pair for nitrite sensing with a low limit of detection 46 µg/L (1.0 µM) and a linearity of 99%. The hybrid integration of an OLED and an OPD with 0.5 mm × 0.5 mm device sizes and a gap of 0.9 mm is a first step towards a highly compact, low cost and highly commercially viable PON analytic platform. To our knowledge, this is the first demonstration of a fully organic-semiconductor-based monolithic integrated platform for real-time PON photometric nitrite analysis.

Monolithic Integrated OLED–OPD Unit for Point-of-Need Nitrite Sensing